Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
Identifieur interne : 001281 ( Main/Repository ); précédent : 001280; suivant : 001282Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
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Abstract
In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys</title><author><name sortKey="Darakchieva, V" uniqKey="Darakchieva V">V. Darakchieva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto Tecnológico e Nuclear</s1><s2>2686-953 Sacavem</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>Instituto Tecnológico e Nuclear</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Chemistry and Biology, Linkoping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>581 83 Linköping</wicri:noRegion></affiliation></author><author><name sortKey="Lorenz, K" uniqKey="Lorenz K">K. Lorenz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto Tecnológico e Nuclear</s1><s2>2686-953 Sacavem</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>Instituto Tecnológico e Nuclear</wicri:noRegion></affiliation></author><author><name sortKey="Xie, M Y" uniqKey="Xie M">M.-Y. Xie</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto Tecnológico e Nuclear</s1><s2>2686-953 Sacavem</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>Instituto Tecnológico e Nuclear</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Chemistry and Biology, Linkoping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>581 83 Linköping</wicri:noRegion></affiliation></author><author><name sortKey="Alves, E" uniqKey="Alves E">E. Alves</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Instituto Tecnológico e Nuclear</s1><s2>2686-953 Sacavem</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>Instituto Tecnológico e Nuclear</wicri:noRegion></affiliation></author><author><name sortKey="Schaff, W J" uniqKey="Schaff W">W. J. Schaff</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University</s1><s2>Ithaca, New York 14853</s2><s3>USA</s3><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Ithaca, New York 14853</wicri:noRegion></affiliation></author><author><name sortKey="Yamaguchi, T" uniqKey="Yamaguchi T">T. Yamaguchi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Photonics, Ritsumeikan University</s1><s2>Shiga 525-8577</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Shiga 525-8577</wicri:noRegion></affiliation></author><author><name sortKey="Nanishi, Y" uniqKey="Nanishi Y">Y. Nanishi</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Photonics, Ritsumeikan University</s1><s2>Shiga 525-8577</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Shiga 525-8577</wicri:noRegion></affiliation></author><author><name sortKey="Ruffenach, S" uniqKey="Ruffenach S">S. Ruffenach</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Groupe d'Etude des Semiconducteurs, Universite Montpellier II</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Moret, M" uniqKey="Moret M">M. Moret</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Groupe d'Etude des Semiconducteurs, Universite Montpellier II</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author><author><name sortKey="Briot, O" uniqKey="Briot O">O. Briot</name><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Groupe d'Etude des Semiconducteurs, Universite Montpellier II</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Languedoc-Roussillon</region><settlement type="city">Montpellier</settlement></placeName><orgName type="university">Université Montpellier 2</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0043531</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0043531 INIST</idno><idno type="RBID">Pascal:12-0043531</idno><idno type="wicri:Area/Main/Corpus">002379</idno><idno type="wicri:Area/Main/Repository">001281</idno></publicationStmt><seriesStmt><idno type="ISSN">1862-6300</idno><title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title><title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Carrier density</term><term>Crystal faces</term><term>Depth profiles</term><term>Dimensionality</term><term>Free electron</term><term>Grain size</term><term>Growth mechanism</term><term>Hydrogen additions</term><term>Impurity density</term><term>Indium nitride</term><term>Thermal annealing</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Electron libre</term><term>Profil profondeur</term><term>Dimensionnalité</term><term>Mécanisme croissance</term><term>Grosseur grain</term><term>Recuit thermique</term><term>Densité porteur charge</term><term>Face cristalline</term><term>Addition hydrogène</term><term>Concentration impureté</term><term>Microscopie force atomique</term><term>Nitrure d'indium</term><term>InN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0></fA01><fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0></fA03><fA05><s2>209</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys</s1></fA08><fA11 i1="01" i2="1"><s1>DARAKCHIEVA (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>LORENZ (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>XIE (M.-Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>ALVES (E.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHAFF (W. J.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAMAGUCHI (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>NANISHI (Y.)</s1></fA11><fA11 i1="08" i2="1"><s1>RUFFENACH (S.)</s1></fA11><fA11 i1="09" i2="1"><s1>MORET (M.)</s1></fA11><fA11 i1="10" i2="1"><s1>BRIOT (O.)</s1></fA11><fA14 i1="01"><s1>Instituto Tecnológico e Nuclear</s1><s2>2686-953 Sacavem</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, Chemistry and Biology, Linkoping University</s1><s2>581 83 Linköping</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Electrical and Computer Engineering, Cornell University</s1><s2>Ithaca, New York 14853</s2><s3>USA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Photonics, Ritsumeikan University</s1><s2>Shiga 525-8577</s2><s3>JPN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Groupe d'Etude des Semiconducteurs, Universite Montpellier II</s1><s2>34095 Montpellier</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA20><s1>91-94</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183A</s2><s5>354000505973280170</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0043531</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counterparts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A72V</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Electron libre</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Free electron</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Electrón libre</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Depth profiles</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Dimensionnalité</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Dimensionality</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Dimensionalidad</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>06</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Grosseur grain</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Grain size</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>08</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Carrier density</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Face cristalline</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Crystal faces</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Addition hydrogène</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Hydrogen additions</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Concentration impureté</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Impurity density</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Concentración impureza</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>13</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Indium nitride</s0><s5>15</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>InN</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>023</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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